to-92s plastic-encapsulate transistors KSA1175 transistor (pnp) features z collector-base voltage z complement to ksc2785 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current (dc) -0.15 a p c collector power dissipation 0.25 w t j junction temperature 150 t stg storage temperature -55-150 to-92s 1. emitter 2. collector 3. base electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =-0.1ma, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5 v collector cut-off current i cbo v cb =-60v, i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 -0.1 a dc current gain h fe v ce =-6v, i c =-1ma 40 700 collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma b -0.3 v base-emitter voltage v be v ce =-6v, i c =-1ma -0.5 -0.8 v transition frequency f t v ce =-6v, i c =-10ma 50 mhz collector output capacitance c ob v cb =-10v, i e =0,f=1mhz 2.8 pf noise figure nf v ce =-6v, i c =-0.3ma, f=100hz, rg=10k ? 20 db classification of h fe rank r o y g l range 40-80 70-140 120-240 200-400 350-700 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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